Reference voltage generating circuit for Electrical EPROM non-volatile memory device, has reference cell having contact terminal connected to polarization block that periodically polarizes contact terminal of cell and reference voltage

摘要

The circuit (100) has a comparison unit (12) connected to a supply source (Vboost) and inserted between a communication node (40) an exit terminal of the circuit. A reference cell is inserted between the node and a reference voltage (V1). The cell includes a contact terminal (34) with a grid floating region connected to a polarization block. The block has an entry terminal connected to the exit terminal of the circuit. The block periodically polarizes the contact terminal of the cell and another reference voltage (V2). A conversion unit is connected to another supply source (Vdd). An independent claim is also included for a reference voltage generating method.