发明名称 |
Junction field effect transistor random access memory |
摘要 |
A random access memory (RAM) in which each memory cell includes a JFET having two gate electrodes selectable by means of a single word line and a single bit line. The JFETs have a common electrode formed from the substrate of a semiconductor body common to each of the memory cells, which serves as one of the main electrodes of each of the JFETs.
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申请公布号 |
US4126899(A) |
申请公布日期 |
1978.11.21 |
申请号 |
US19770814648 |
申请日期 |
1977.07.11 |
申请人 |
US PHILIPS CORP |
发明人 |
LOHSTROH J;SALTERS R;HART C;KOOMEN J |
分类号 |
G11C11/405;G11C11/34;G11C11/39;G11C11/412;H01L21/331;H01L27/07;H01L27/10;H01L27/108;H01L29/73;H01L29/808;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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