| 摘要 |
<p>A formation method of the semiconductor device is provided to reduce the mask production cost and the wafer process cost by decreasing the times of the optical proximity effect correction. A formation method of a semiconductor device comprises a step(S10) for designing a circuit; a step(S14) for judging the violation whether or not of the design rule file; a step(S20) for performing the optical proximity effect correction; a step(S30) for making a mask; and a step(S40) for performing the wafer process. The circuit comprises the main chip and the test pattern and perform the design rule file(S12). The obedience or disobedience is determined by comparing the main chip with the test pattern. The mask is manufactured by the result of the step of the optical proximity effect correction.</p> |
