| 发明名称 |
PRODUCTION OF SILICON OXIDE FILM |
| 摘要 |
PURPOSE:To economically produce a uniform silicon oxide film in a high yield by spraying an oxide gas and a silicide gas upon a substrate set opposite to the gas streams in a reactor under reduced press. or a vacuum. |
| 申请公布号 |
JPS53131300(A) |
申请公布日期 |
1978.11.15 |
| 申请号 |
JP19770118800 |
申请日期 |
1977.10.03 |
| 申请人 |
TDK ELECTRONICS CO LTD;YAMAZAKI SHUNPEI |
发明人 |
YAMAZAKI SHIYUNPEI;SUGIMURA YURIKO |
| 分类号 |
C23C16/40;C23C16/455;C30B29/18 |
主分类号 |
C23C16/40 |
| 代理机构 |
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