发明名称 |
THYRISTOR WITH BRANCHED BASE |
摘要 |
<p>THYRISTOR WITH BRANCHED BASE The present invention pertains to a thyristor device comprising a semiconductor body having at least one emitter zone positioned at a major surface of the body. A base zone shares a portion of the major surface with the emitter zone and extends under the entirety of the emitter zone. The base zone and emitter zone form a PN junction at their interface. The portion of the base zone under the emitter zone has a plurality of low resistivity branches which have their common origin in the portion of the base zone located directly under the major surface.</p> |
申请公布号 |
CA1042558(A) |
申请公布日期 |
1978.11.14 |
申请号 |
CA19750241286 |
申请日期 |
1975.12.04 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KIRSCHNER, FRITZ |
分类号 |
H01L29/74;H01L29/06;H01L29/08;H01L29/10;(IPC1-7):01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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