发明名称 THYRISTOR WITH BRANCHED BASE
摘要 <p>THYRISTOR WITH BRANCHED BASE The present invention pertains to a thyristor device comprising a semiconductor body having at least one emitter zone positioned at a major surface of the body. A base zone shares a portion of the major surface with the emitter zone and extends under the entirety of the emitter zone. The base zone and emitter zone form a PN junction at their interface. The portion of the base zone under the emitter zone has a plurality of low resistivity branches which have their common origin in the portion of the base zone located directly under the major surface.</p>
申请公布号 CA1042558(A) 申请公布日期 1978.11.14
申请号 CA19750241286 申请日期 1975.12.04
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KIRSCHNER, FRITZ
分类号 H01L29/74;H01L29/06;H01L29/08;H01L29/10;(IPC1-7):01L29/74 主分类号 H01L29/74
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