发明名称 |
METHOD OF MANUFACTURING SINGLE CRYSTAL SILICON BY ARC HEATER |
摘要 |
<p>A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.</p> |
申请公布号 |
JPS53129179(A) |
申请公布日期 |
1978.11.10 |
申请号 |
JP19780043367 |
申请日期 |
1978.04.14 |
申请人 |
WESTINGHOUSE ELECTRIC CORP |
发明人 |
ROBAATO MAZERUSUKI;MOORISU JIERAADO FUEI;FURANSHISU JIYOSEFU HAABEI |
分类号 |
C01B33/02;C01B33/027;C01B33/03;C01B33/033;C30B11/12;C30B15/00;C30B15/02;C30B15/06;C30B15/08;C30B29/06;H05B7/18 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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