发明名称 METHOD OF MANUFACTURING SINGLE CRYSTAL SILICON BY ARC HEATER
摘要 <p>A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.</p>
申请公布号 JPS53129179(A) 申请公布日期 1978.11.10
申请号 JP19780043367 申请日期 1978.04.14
申请人 WESTINGHOUSE ELECTRIC CORP 发明人 ROBAATO MAZERUSUKI;MOORISU JIERAADO FUEI;FURANSHISU JIYOSEFU HAABEI
分类号 C01B33/02;C01B33/027;C01B33/03;C01B33/033;C30B11/12;C30B15/00;C30B15/02;C30B15/06;C30B15/08;C30B29/06;H05B7/18 主分类号 C01B33/02
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