| 发明名称 |
INSULATED GATE FIELD EFFECT TYPE SEMICONDUCTOR DEVICE FOR LARGE POWER |
| 摘要 |
<p>PURPOSE:To obtain an IGFET of high dielectric strength and large current by providing an offset gate between source region and drain region.</p> |
| 申请公布号 |
JPS53128281(A) |
申请公布日期 |
1978.11.09 |
| 申请号 |
JP19770042651 |
申请日期 |
1977.04.15 |
| 申请人 |
HITACHI LTD |
发明人 |
OCHI SHIKAYUKI;OKABE TAIAKI;YOSHIDA ISAO;NAGATA MINORU;ITOU HIDESHI;FURUUMI MASATOMO;TAKEUCHI MASARU |
| 分类号 |
H01L21/8238;H01L27/02;H01L27/092;H01L29/78;H03F3/30 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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