METHOD OF PRODUCING DEFECTLESS EPITAXIAL LAYER OF GALLIUM PHOSPHIDE

摘要

A nitrogen-doped n-type epitaxial layer of GaP grown from a vapor phase is heated at a temperature ranging from 740.degree.C to 1000.degree.C for a selected period of time depending on the temperature. The heat treatment is carried out in H2, N2 or Ar in the presence of Ga and P vapors. Alternatively, a protection coating of SiO2, Si3N4 or Al2O3 is formed on the epitaxial layer prior to the heat treatment.