| 发明名称 |
Laser structure on silicon using aspect ratio trapping growth |
| 摘要 |
A method of forming a laser on silicon using aspect ratio trapping (ART) growth. The method may include; forming a first insulator layer on a substrate; etching a trench in the first insulator layer exposing a top surface of the substrate; forming a buffer layer in the trench using ART growth; forming a laser on the buffer layer, the laser includes at least an active region and a top cladding layer; and forming a top contact on the top cladding layer and a bottom contact on the substrate. |
| 申请公布号 |
US9401583(B1) |
申请公布日期 |
2016.07.26 |
| 申请号 |
US201514672299 |
申请日期 |
2015.03.30 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Cheng-Wei;Leobandung Effendi;Li Ning;Sadana Devendra K.;Shiu Kuen-Ting |
| 分类号 |
H01L21/00;H01S5/323;H01S5/026;H01S5/32 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
Wakim Andrew G.;Percello Louis J. |
| 主权项 |
1. A method of forming a laser on a semiconductor comprising:
forming a first insulator layer on a substrate; etching a trench in the first insulator layer exposing a top surface of the substrate; forming a buffer layer in the trench using aspect ratio trapping (ART) growth; forming a laser on the buffer layer, the laser includes at least an active region and a top cladding layer; and forming a top contact on the top cladding layer and a bottom contact on the substrate. |
| 地址 |
Armonk NY US |
