发明名称 Electroluminescent semiconductor for fibre-optics - has annular quasi isolating region controlling current density in active area of pn junction
摘要 <p>The semiconductor has a localised light emitting or luminescent region which can be tailored to the physical requirements of fibre-optics etc.. The manufacturing technique has a min. number of processing stages. The semiconductor design is based on the use of a luminescent material whose area (3) and that of the active part to its associated P/N junction is circumscribed by a quasi-isolating region (4). The thickness is chosen such that the current circulating between the electrodes (6, 7) has a high value at the level of the junction, the current distribution due to its restriction within the volume providing a high intensity emission for a comparatively low basic current value.</p>
申请公布号 FR2386907(A1) 申请公布日期 1978.11.03
申请号 FR19770010373 申请日期 1977.04.06
申请人 RADIOTECHNIQUE COMPELEC 发明人 DANIEL DIGUET
分类号 H01L33/14;H01S5/20;(IPC1-7):01L33/00;01L21/265;04B9/00 主分类号 H01L33/14
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