Monolithic active pixel radiation detector with shielding techniques

摘要

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

主权项

1. A monolithic active pixel radiation detector, comprising:
a substrate comprising a silicon layer upon which electronic circuits are configured; a plurality of channels formed on said silicon layer, wherein said plurality of channels is connected to sources of charge signals, wherein a source of said charge signals among said sources of charge signals is biased entirely or partially in depletion in a high-resistivity bulk layer of said substrate, wherein said charge signals are collected by implanted electrodes and flow through electrically conducting vias established in an isolation oxide on said substrate; at least one first nested well, implanted deep and configured from said substrate, wherein said at least one first nested well comprises a signal collection electrode assists in a collection of charge carriers released in interaction with radiation and wherein at least one second nested well, implanted shallower and entirely confined in said at least one first nested well, so as to separate said electronic circuits from a sensing portion of said substrate, wherein said at least one second nest well comprises a shallow well; and a buried oxide configured from said substrate wherein said shallow well is located beneath said buried oxide and is entirely electrically isolated through confinement inside said at least one first nested well and comprises an AC-ground plane that is tied to a fixed potential.