Method of manufacturing a device having a shield plate dopant region

摘要

Forming a transistor transistor includes forming a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of electrically conductive shield plates, and a shield plate dopant region. A sidewall of the gate aligns with a drain side boundary of the surface region. The drain dopant region is formed within the surface region on the drain side. The drift dopant region is formed within the surface region between the drain side boundary and the drain dopant region. The set of electrically conductive shield plates includes a first shield plate overlying the drift dopant region. The shield plate dopant region is formed within the drift dopant region and underlies the set of shield plates.

主权项

1. A method of manufacturing a transistor, the method comprising:
forming a gate on a surface region of a semiconductor substrate, the gate having a sidewall that aligns with a gate region boundary, wherein the gate region boundary defines a lateral boundary for a channel region within the surface region under the gate; forming a drift dopant region within the surface region on a first side of the gate, wherein the drift dopant region extends from the gate region boundary; forming a set of electrically conductive shield plates that overlies the sidewall of the gate and a portion of the drift dopant region; forming a shield plate dopant region within the drift dopant region and underlying at least one shield plate of the set of shield plates; and forming a drain dopant region within the surface region on the first side of the gate, wherein the drift dopant region is disposed between the channel region and the drain dopant region.