Method of manufacturing a two-phase charge-transfer semiconductor device and a device obtained by said method

摘要

A new method of manufacturing a two-phase charge-transfer device operating by the charge-coupled technique, in which the asymmetry means associated with each group of electrodes are constituted by impurity barriers implanted in the semiconductor substrate and are automatically positioned in relation to the electrodes, in particular by carrying out implantation operations through masks constituted by films of silicon nitride and by the electrodes themselves, the films of silicon nitride subsequently being completely removed.