发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To obtain a pad of a large film thickness and thus to enhance the yield and the reliability, by forming the electrode draw-out bonding pad with poly crystal Si and at least one kind of other metals.
申请公布号 JPS53118369(A) 申请公布日期 1978.10.16
申请号 JP19770033713 申请日期 1977.03.25
申请人 NIPPON ELECTRIC CO 发明人 OOTA MICHIHIRO
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
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