Semiconductor esp. FET device mfr. - forms electrostatic screening layer of conducting material between inorganic insulating layer and organic encapsulation material layer

摘要

The semiconductor device is manufactured from a mono-crystalline semiconductor material whose surface is coated with a layer of an inorganic insulating material. The electrode applied to the surface affects the device capacitively. The shell of the device is made from an insulating organic plastic. There is a protective layer (12) which screens the semiconductor substrate (1) electrostatically from the outer shell. This is a conducting layer and is applied before mounting the outer shell (13). The conducting layer is linked to an external terminal which during operation is held at a fixed potential.