| 摘要 |
PURPOSE:To restrict the deterioration and to make the device longer in life, by filling at least one or more III b group or Vb group other than the elements constituting the original crystal into the original crystal in the range of 8X10<17> to 1X10<20> atoms/cm<3>, in the injected light emitting device by direct transition of IIIb-Vb group compounds. |
