| 发明名称 |
MOSFET TRANSISTOR AND METHOD OF FABRICATION |
| 摘要 |
<p>An n channel MOSFET transistor which includes doping of previously formed source and drain elements with a heavy diffusion of phosphorous or arsenic creating n++ regions in the source and drain. The extra diffusion step is preferably accomplished just prior to contact metalization.</p> |
| 申请公布号 |
CA1038967(A) |
申请公布日期 |
1978.09.19 |
| 申请号 |
CA19750221639 |
申请日期 |
1975.03.06 |
| 申请人 |
INTEL CORPORATION |
发明人 |
WATROUS, WILLIS G. (JR.) |
| 分类号 |
H01L29/78;H01L21/00;H01L21/22;H01L21/336;H01L23/485;H01L29/00;H01L29/08;(IPC1-7):01L21/22;01L29/94 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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