| 摘要 |
PURPOSE:To prevent gas adsorption from storage environment and to obtain a member most suitable for uses requiring high purity by eliminating impurities with a halogen (-containing) gas at high temperature, sealing an inert gas in a gas impermeable film and packaging the member. CONSTITUTION:For example, an ordinary graphite member is placed at high temperature, impurities are eliminated with a halogen gas or a halogen- containing gas, an Ar gas is sealed in a gas impermeable film prepared by laminating a polyester film and a polyethylene film to both side of aluminum foil and the member is packaged with the film. Or the impurities are removed, vacuum degassing treatment at high temperature is carried out or not and the member is packaged with the same gas impermeable film as that used in the above-mentioned operation. By this method, since the state in production is preserved, a graphite member most suitable for manufacture of semiconductor or nuclear fusion reactor requiring high purity is obtained. |
