发明名称 PROCEDIMENTO PER LA PRODUZIONE DI CONTATTI ELETTRICI A RISALTO SU MICROCIRCUITI ELETTRONICI E PRODOTTO OTTENUTO
摘要 Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i.e., without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then covered with an insulation layer wherein apertures are opened to expose palladium at selected sites for immersion in an electroless plating bath of ionic Cu or Ni for bump formation.
申请公布号 IT7851045(D0) 申请公布日期 1978.09.11
申请号 IT19780051045 申请日期 1978.09.11
申请人 TEXAS INSTRUMENTS INCORPORATED SO CIETA' DELLO STATO DEL DELAWARE 发明人 ALEXANDER J.HARROVER;ROBERT C.HOOPER;CHARLES E.TERRY;MICHAEL J.VANHOY
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L/ 主分类号 H01L21/60
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