| 发明名称 |
METHOD OF ALIGNING EDGES OF EMITTER AND ITS METALIZATION IN A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>In making a thyristor, the outer face of the N-type emitter layer and an adjoining surface of the P-type base layer of a semiconductor wafer are metalized, a limited zone of metal overlapping the edge of the emitter-base junction is removed, and then the entire portion of the emitter layer exposed by the removed metal is etched away.</p> |
| 申请公布号 |
CA1037613(A) |
申请公布日期 |
1978.08.29 |
| 申请号 |
CA19750228434 |
申请日期 |
1975.06.02 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
DECECCO, ANGELO L.;HYSELL, ROBERT E.;PICCONE, DANTE E. |
| 分类号 |
H01L21/00;H01L21/28;H01L29/00;(IPC1-7):01L21/283;01L29/74 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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