发明名称 Output stage for semiconductor charge transfer circuit - has second electrode insulated from substrate which can be charged by continuous voltage
摘要 <p>The output stage for a semiconductor charge transfer circuit has a series of insulating layer or blocking layer capacitors. These capacitors are arranged on a doped semiconductor surface of a substrate. The circuit has a first region arranged on the surface of the substrate which is doped oppositely to the surface. This region can be connected via the substrate to a capacitor of the series and also to an input of an output amplifier. The circuit has a second region separated from the first. This second region being deposited on the surface of the substrate and it is oppositely dopes to the substrate. The region is connected to a contact, accessible from the exterior. The second region has an electrode arranged above the space. This electrode is separated from the substrate by an electrically insulating layer and can be charged by determined voltages.</p>
申请公布号 FR2379167(A1) 申请公布日期 1978.08.25
申请号 FR19780001652 申请日期 1978.01.20
申请人 SIEMENS AG 发明人
分类号 G11C27/04;H01L21/339;H01L29/423;H01L29/762;H01L29/768;H03H11/26;(IPC1-7):01L29/66 主分类号 G11C27/04
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