发明名称 |
Large grain thin film polycrystalline P-InP/n-Cds solar cell |
摘要 |
A thin film solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide, whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.
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申请公布号 |
US4108684(A) |
申请公布日期 |
1978.08.22 |
申请号 |
US19770838032 |
申请日期 |
1977.09.29 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
ZANIO, KENNETH W.;FRAAS, LEWIS M. |
分类号 |
H01L31/0368;H01L31/072;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/0368 |
代理机构 |
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