发明名称 |
PROCESSO DI FABBRICAZIONE DI UN CONTATTO DI TANTALIO SU UN SUBSTRATO SEMICONDUTTORE DI SILICIO. |
摘要 |
A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum. |
申请公布号 |
IT7826099(D0) |
申请公布日期 |
1978.07.26 |
申请号 |
IT19780026099 |
申请日期 |
1978.07.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
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分类号 |
H01L21/768;H01L21/28;H01L21/285;H01L21/338;H01L21/60;H01L23/532;H01L29/43;H01L29/45;H01L29/47;H01L29/872 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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