发明名称 |
Compound transistor circuitry |
摘要 |
A compound transistor circuitry having an output characteristic resembling that of a pentode vacuum tube comprises: a first field effect transistor having a saturated-type output characteristic resembling that of a pentode vacuum tube; and a second field effect transistor having an unsaturated-type output characteristic resembling that of a triode vacuum tube. The first and second field effect transistors have a conducting channel of a single and same conductivity type, respectively. The second field effect transistor is connected in series with the drain current path of the first field effect transistor. This second field effect transistor is rendered conductive only when the drain-source voltage of the first field effect transistor exceeds its pinch-off voltage.
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申请公布号 |
US4100438(A) |
申请公布日期 |
1978.07.11 |
申请号 |
US19750604762 |
申请日期 |
1975.08.14 |
申请人 |
NIPPON GAKKI SEIZO KABUSHIKI KAISHA |
发明人 |
YOKOYAMA, KENJI |
分类号 |
H03F1/22;H03F3/16;(IPC1-7):H03F3/16;H03K3/35;H01L29/80 |
主分类号 |
H03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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