GERMANIUM DOPED GAAS LAYER AS AN OHMIC CONTACT

摘要

A heavily germanium doped gallium arsenide layer is epitaxially deposited from solution on a Group III-V compound semiconductor device in order to provide contact between the device and external metallic circuitry. If the net p-type carrier concentration in the layer is greater than 3.5 x 1019 per cubic centimeter, the blocking voltage between the device and common contacting metals, such as chromium and titanium is less than 50 millivolts. Deposition takes place at temperatures from 850 DEG C to 700 DEG C with germanium included in the solution in a concentration from 20 to 50 atom percent.