发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain a good contactness and to reduce the chip area, by making unnecessary the contact hole formation provided at the wiring crossings, through the formation of the ion injection layer at broken part of the diffusion wiring layer and the mutual connection with this.</p>
申请公布号 JPS5373983(A) 申请公布日期 1978.06.30
申请号 JP19760150206 申请日期 1976.12.14
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 NAGATSUNE AKIRA
分类号 G11C17/00;G11C17/12;H01L21/768;H01L23/522;H01L29/78 主分类号 G11C17/00
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