| 摘要 |
<p>Electroluminescent device comprises a semiconductor substrate with a p-type zone (a) and an n-type zone (b) forming an electroluminescent p-n junction (c); and with isoelectronic traps of increased density. The conductivity of the substrate is lower near junction (c) than in regions remote from the junction. At a distance (d) from junction (c) which is at max. equal to the diffusion length of the minor carriers, a potential barrier is formed by spacing the concn. of the major dopant atoms in a ratio of >=100 and pref. >=1000 on side (a) and >=10 on side (b). Light emitting diodes etc. obtd. have increased luminescence, where potential barriers confine the dopants.</p> |
