发明名称 PROCESSO DI FABBRICAZIONE DI DISPOSITIVI SEMICONDUTTORI A CIRCUITO INTEGRATO.
摘要 A high performance package for integrated circuit semiconductor devices in which decoupling capacitors are provided in close proximity to the integrated circuit devices for reducing voltage variations in the power driver lines, and/or a ground plate overlying the stripe metallurgy on the surface of the substrate for reducing cross-talk between signal lines. The decoupling capacitors are each comprised of a conductive layer on the inside of a via hole, a concentric dielectric layer on the conductive layer, and an electrically conductive plug in physical contact with the dielectric layer that is associated with the driver line circuitry of the package.
申请公布号 IT7824893(D0) 申请公布日期 1978.06.23
申请号 IT19780024893 申请日期 1978.06.23
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人
分类号 H05K1/16;H01L23/02;H01L23/12;H01L23/52;H01L23/64;H01L25/00;H05K1/18;(IPC1-7):H01L/ 主分类号 H05K1/16
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