Multiple redundancy loop bubble domain memory

摘要

This invention relates to an improved network and technique for correcting bubble domain memories of the major/minor loop type. In particular, a selectively insertable correction loop can be provided in a major loop path to insert or remove blank bits so that the effect of defective minor loops can be overcome. The correction networks include propagation loops formed of conventional magnetic bubble domain device elements and a conductor which is selectively alterable to provide a bypass or insertion mode of operation for the correction loop relative to the major loop.