| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To suppress short-channel effect and miniaturize memory cells by providing recesses in the gate regions of MOS transistors and increase the scale of integration by extending MOS capacitor electrodes from the flat part on substrate along the side face or bottom surface of the recesses. |
| 申请公布号 |
JPS5362989(A) |
申请公布日期 |
1978.06.05 |
| 申请号 |
JP19760138180 |
申请日期 |
1976.11.17 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
NATORI KENJI;MASUOKA FUJIO |
| 分类号 |
G11C11/401;G11C11/404;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/78 |
主分类号 |
G11C11/401 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
