| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To avoid lowering of the threeshold voltage and the voltage/capacitance characteristics for the element which contains a singleor multi-layer Si substrate using a process in which no contained impurity is evaporated from the exposed multi-crystal Si layer due to the atmosphere produced when the second gate oxidationis carried out.
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| 申请公布号 |
JPS5355986(A) |
申请公布日期 |
1978.05.20 |
| 申请号 |
JP19760079821 |
申请日期 |
1976.07.07 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
HARADA NOZOMI;KUBOTA NOBUHISA |
| 分类号 |
H01L27/088;H01L21/28;H01L21/3215;H01L21/339;H01L21/768;H01L21/8234;H01L27/108;H01L27/115;H01L29/417;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 地址 |
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