| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND AMPLIFIER CIRCUIT |
| 摘要 |
PURPOSE:To reduce the sacrifice in amplification factor and achieve lower power consumption by inserting a resistor in series to the drain side of P channel and N channel FETs being connected in series. |
| 申请公布号 |
JPS5352382(A) |
申请公布日期 |
1978.05.12 |
| 申请号 |
JP19760127219 |
申请日期 |
1976.10.25 |
| 申请人 |
HITACHI LTD |
发明人 |
YAMASHIRO OSAMU |
| 分类号 |
H03F3/185;H01L21/822;H01L27/04;H01L27/092;H01L29/78 |
主分类号 |
H03F3/185 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
