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经营范围
发明名称
SEMICONDUCTOR MEMORY CIRCUIT
摘要
<p>PURPOSE:A charging MISFET is connected to the series circuit in each row to read the information from a vertical ROM at a high speed, thereby obtaining a high-speed ROM with a mass storage.</p>
申请公布号
JPS5348425(A)
申请公布日期
1978.05.01
申请号
JP19760122787
申请日期
1976.10.15
申请人
HITACHI LTD
发明人
WAKIMOTO HARUMI;TANIMURA NOBUROU
分类号
G11C17/00;G11C17/12
主分类号
G11C17/00
代理机构
代理人
主权项
地址
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