| 摘要 |
The invention provides a method of depositing a thin layer of material by decomposing a gas in a plasma. To avoid saturating the rate of depositing doped silicon, the substrate onto which the doped silicon is to be deposited has an RF bias applied thereto with respect to the plasma. The improvement resides in circulating in the chamber a gaseous medium at a pressure between 10-2 and 10-4 torr in the vicinity of the substrate by jetting the gaseous medium into the chamber, via a tube in which the pressure is maintained between 0.2 and 4 torr, through injection ports which face the substrate. The method is useful in the manufacture of semiconductor components. |
