Dielectric film prodn. by reactive evapn. - esp. of metal or metal sub:oxide, at high oxygen partial pressure at substrate only

摘要

In the prodn. of a dielectric film by reactive evapn. the reaction gas is admitted into the receiver so that the partial pressure is high before the condensn. surface but low at the evaporator and/or evapn. source and an inert gas is admitted into the receiver near the evaporator and/or evapn. source to form a protective gas atmos. in this region. The process is claimed for use for the prodn. of dielectric films by oxidn. of Cr, Mn, Ni, Al, Ti or Si. Very uniform films of high optical and/or electrical quality are obtd. In particular, a low absorption in a wide range of the spectrum, little mechanical stress, a high insulation value, small dielectric loss and slight flaw density are obtd.