| 摘要 |
The electrically floating storage gate is surrounded on all sides by an insulator, and is provided with a conducting lobe for recharging of the storage gate by the Fowler-Nordheim tunnel effect. A control gate capacitively controls the storage gate, and is itself externally controlled. The lobe is separated from a semiconductor recharging zone by a thin insulating layer through which the storage gate can be recharged through the recharging zone. The recharging zone of the first conduction type is directly adjacent to a semiconductor zone of a second conduction type, also separated from the lobe by a think insulating layer. The adjacent SC zone is also electrically floating. |
