发明名称 SEMICONDUCTOR DEVICE WITH LOW IMPEDANCE BOND
摘要 A semiconductor device is formed by scoring a conductive surface of a substrate and locating a semiconductive element over a portion of the capillary formed by scoring. Solder in molten form is associated with the portion of the capillary remote from the semiconductive element and is drawn by the capillary under the semiconductive element to form a tenacious, low impedance interconnection therewith. The substrate may be a dielectric or a metal heat sink. Leads may be secured to the substrate similarly as the semiconductive element is secured. A dielectric substrate may be similarly secured to a metal heat sink. Multiple interconnecting or parallel capillaries may be employed. The capillaries may be provided with a remote interconnection, an interconnection for solder receipt, or an indicator portion remote from solder receipt. Plural semiconductive elements may be mounted to a single substrate with solder fed to the semiconductive elements simultaneously or sequentially. On a dielectric substrate the semiconductive elements may be electrically isolated by removing a conductive surface portion after soldering. The capillaries may also take the form of apertures.
申请公布号 US3706915(A) 申请公布日期 1972.12.19
申请号 USD3706915 申请日期 1970.03.09
申请人 GENERAL ELECTRIC CO. 发明人 WILLIAM F. LOOTENS;JOSEPH K. FLOWERS
分类号 H01L21/60;H01L23/31;H01L23/433;H01L23/492;H01L29/00;(IPC1-7):H01L5/02 主分类号 H01L21/60
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