发明名称 MANUFACTURE OF CHARGE TRANSFER ELEMENT
摘要 PURPOSE:To achieve an electrode structure of 1-layer and 1-phase, which causes no fault in the electric charge transfer by forming first and second poly Si shift electrodes, which are turned to the electrodes of different phases, using SiO2 and Si3N4 films.
申请公布号 JPS5338985(A) 申请公布日期 1978.04.10
申请号 JP19760112944 申请日期 1976.09.22
申请人 SONY CORP 发明人 FURUKAWA SHIYUNSUKE
分类号 H01L29/762;H01L21/28;H01L21/306;H01L21/339 主分类号 H01L29/762
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