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发明名称
SEMICONDUCTOR DEVICE
摘要
PURPOSE:To obtain a memory unit which features an increased integration performance and stabilized operation, by providing the third region unified with either the source or drain of FET or near them and forming a capacity on the third region.
申请公布号
JPS5336485(A)
申请公布日期
1978.04.04
申请号
JP19760111490
申请日期
1976.09.16
申请人
MITSUBISHI ELECTRIC CORP
发明人
SHIMOTORI KAZUHIRO;ICHIYAMA TOSHIO
分类号
G11C11/401;H01L21/8234;H01L21/8242;H01L27/06;H01L27/10;H01L27/108
主分类号
G11C11/401
代理机构
代理人
主权项
地址
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