| 摘要 |
<p>Electroluminescent semiconductor is based on a monocrystalline substrate with an n-GaN layer; an active GaN layer doped with a doping element for the formation of acceptor impurities at least completely compensating the natural donor impurities; a surface electrode in contact with the active layer; and also provision for contacting the n-conductive layer. Improvement is that (part of) the n-conductive layer, which is parallel to and bounds the active layer, is doped for less than complete compensation of these doping elements, the net concn. of the resultant impurities is small (pref. of the order of tenths to millionths) w.r.t. the concn. of natural impurities and these are almost homogeneous in the stated part of the layer. The net concn. in the material can be varied during epitaxial growth and more accurate and easily control is possible.</p> |
