| 发明名称 |
PRODUCTION OF MOS TYPE INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:To increase the threshold voltage of gates and obtain the memory cell transistors of ROM of higher scale of integration and shorter write time of memory contents by selectively increasing the impurity concentration of a semiconductor substrate. |
| 申请公布号 |
JPS5333076(A) |
申请公布日期 |
1978.03.28 |
| 申请号 |
JP19760107238 |
申请日期 |
1976.09.09 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TAKEI SAKAE |
| 分类号 |
H01L27/112;G11C17/00;G11C17/08;G11C17/12;G11C17/14;H01L21/8246;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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