发明名称 |
Method for producing an InSb thin film |
摘要 |
A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 x 104 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 102ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.
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申请公布号 |
US4080478(A) |
申请公布日期 |
1978.03.21 |
申请号 |
US19750603529 |
申请日期 |
1975.08.11 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMAMOTO, NAOKI;OI, TETSU;SATO, KIKUJI |
分类号 |
H01L43/12;C30B13/00;C30B19/00;H01F10/187;H01F41/14;H01L43/14;(IPC1-7):H01F10/02 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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