发明名称 |
Glass passivated junction semiconductor devices |
摘要 |
This invention is directed to a semiconductor device comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material. |
申请公布号 |
US4080621(A) |
申请公布日期 |
1978.03.21 |
申请号 |
US19770791343 |
申请日期 |
1977.04.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUNAKAWA, SHIGERU;YAMANE, MASAHIRO |
分类号 |
H01L21/301;H01L21/316;H01L21/329;H01L21/56;H01L23/31;H01L29/06;(IPC1-7):H01L29/34 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|