| 摘要 |
A bipolar-type semiconductor device, such as a bipolar transistor, has a heavily doped emitter region, a lightly doped emitter region, a base region, a collector region and a passivation layer or layers on said regions. The passivation layer formed on a surface end of a PN junction between the collector region and the base region is a polycrystalline silicon containing oxygen atoms in a range between 14 and 35 atomic percents. The other passivation layer formed on a surface end of the other PN junction between the base region and the lightly doped emitter region is made of silicon-dioxide, which covers also a surface end of lightly doped and heavily doped (LH) junction between two emitter regions.
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