ZONA DI CIRCUITO INTEGRATO MONOLITICO DI TIPO I2L, LA QUALE ZONA E' SITUATA ALLA SUPERFICIE DI UN CORPO SEMICONDUTTORE DI SILICIO E PROCEDIMENTO DI FABBRICAZIONE DI DETTA ZONA.,申请号IT19780021015-传众专利搜索

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发明名称	ZONA DI CIRCUITO INTEGRATO MONOLITICO DI TIPO I2L, LA QUALE ZONA E' SITUATA ALLA SUPERFICIE DI UN CORPO SEMICONDUTTORE DI SILICIO E PROCEDIMENTO DI FABBRICAZIONE DI DETTA ZONA.
摘要
申请公布号	IT7821015(D0)	申请公布日期	1978.03.09
申请号	IT19780021015	申请日期	1978.03.09
申请人	ITT INDUSTRIES INC.	发明人
分类号	H01L;(IPC1-7):H01L/	主分类号	H01L
代理机构		代理人
主权项
地址

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