摘要 |
<p>Process for producing large-size, self-supporting plates of silicon deposited from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 mu m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.</p> |
申请人 |
WACKER-CHEMITRONIC GESELLSCHAFT FUER ELEKTRONIK-GRUNDSTOFFE MBH |
发明人 |
AUTHIER,BERNHARD,DIPL.-PHYS.;GRIESSHAMMER,RUDOLF,DIPL.-CHEM.DR.;KOEPPL,FRANZ,DIPL.-ING.;LANG,WINFRIED,DIPL.-CHEM.DR.;RATH,HEINZ-JOERG,DIPL.-CHEM.DR.;SIRTL,ERHARD,DIPL.-CHEM.DR. |