FORMATION OF THIN FILM OF SEMICONDUCTOR

摘要

PURPOSE:To form a thin film of a semiconductor having satisfactory electrical characteristics as deposited by spraying a plasma jet obtd. by melting powdery starting material for the thin film on a substrate. CONSTITUTION:Ions or atomic gas of an element for reducing defect density is fed into an evacuated vessel 1 and a substrate 8 is set in the vessel 1. A plasma jet 7 obtd. by melting powdery starting material for a thin film 9 of a semiconductor to be formed is sprayed on the substrate 8. Fluorine is used as the element for reducing defect density. The characteristics of the resulting thin film 9 is improved.