Opto-electronic semiconductor element - having over-structure on elemental semiconductor zone, for integrated diodes and photocathodes

摘要

Opto-electronic semiconductor element has an elemental semiconductor zone with an overstructure. The zone with overstructure has a periodic structural change and this period is less than the average free path length of the conduction electrons. Used in photodiodes, luminescent diodes and photocathodes. These elements can be made by modern semiconductor technology, esp. Si planar technique, and can be integrated with other semiconductor elements.