| 摘要 |
<p>PURPOSE:To form a mask capable of providing patterns of line widths of less than 1 mum by forming an X-ray transmission layer on one surface of a Si single crystal substrate, evaporating a thin Ti film and a thin Pt film of the same thickness thereon, thendpatterning said layers to form an X-ray absorption layer, selectively etching the substrate and supporting the transmission layer and the absorption layer.</p> |
