| 发明名称 |
SEMICONDUCTOR VAPOR PHASE GROWTH METHOD |
| 摘要 |
PURPOSE:To control the resistivity of a grown layer at high accuracy by adding an adsorbent into a semiconductor compound source thereby fixing the impurities mixed in the source which will affect resistivity in vapor growth. |
| 申请公布号 |
JPS5315758(A) |
申请公布日期 |
1978.02.14 |
| 申请号 |
JP19760089187 |
申请日期 |
1976.07.28 |
| 申请人 |
HITACHI LTD |
发明人 |
INOUE HIRONORI;SUZUKI TAKAYA;URA MITSURU |
| 分类号 |
C30B25/02;C23C16/24;C23C16/44;C23C16/448;H01L21/205 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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